474 research outputs found
Closing the gap between spatial and spin dynamics of electrons at the metal-to-insulator transition
We combine extensive precision measurements of the optically detected spin
dynamics and magneto-transport measurements in a contiguous set of n-doped bulk
GaAs structures in order to unambiguously unravel the intriguing but complex
contributions to the spin relaxation at the metal-to-insulator transition
(MIT). Just below the MIT, the interplay between hopping induced loss of spin
coherence and hyperfine interaction yields a maximum spin lifetime exceeding
800~ns. At slightly higher doping concentrations, however, the spin relaxation
deviates from the expected Dyakonov-Perel mechanism which is consistently
explained by a reduction of the effective motional narrowing with increasing
doping concentration. The reduction is attributed to the change of the dominant
momentum scattering mechanism in the metallic impurity band where scattering by
local conductivity domain boundaries due to the intrinsic random distribution
of donors becomes significant. Here, we fully identify and model all intricate
contributions of the relevant microscopic scattering mechanisms which allows
the complete quantitative modeling of the electron spin relaxation in the
entire regime from weakly interacting up to fully delocalized electrons
Lande g-tensor in semiconductor nanostructures
Understanding the electronic structure of semiconductor nanostructures is not
complete without a detailed description of their corresponding spin-related
properties. Here we explore the response of the shell structure of InAs
self-assembled quantum dots to magnetic fields oriented in several directions,
allowing the mapping of the g-tensor modulus for the s and p shells. We found
that the g-tensors for the s and p shells show a very different behavior. The
s-state in being more localized allows the probing of the confining potential
details by sweeping the magnetic field orientation from the growth direction
towards the in-plane direction. As for the p-state, we found that the g-tensor
modulus is closer to that of the surrounding GaAs, consistent with a larger
delocalization. These results reveal further details of the confining
potentials of self-assembled quantum dots that have not yet been probed, in
addition to the assessment of the g-tensor, which is of fundamental importance
for the implementation of spin related applications.Comment: 4 pages, 4 figure
Electron spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition
We have measured the electron spin relaxation rate and the integrated spin
noise power in n-doped GaAs for temperatures between 4 K and 80 K and for
doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16}
cm^{-3} using spin noise spectroscopy. The temperature dependent measurements
show a clear transition from localized to free electrons for the lower doped
samples and confirm mainly free electrons at all temperatures for the highest
doped sample. While the sample at the metal-insulator-transition shows the
longest spin relaxation time at low temperatures, a clear crossing of the spin
relaxation rates is observed at 70 K and the highest doped sample reveals the
longest spin relaxation time above 70 K.Comment: 6 pages, 4 figure
Spin filtering and magnetoresistance in ballistic tunnel junctions
We theoretically investigate magnetoresistance (MR) effects in connection
with spin filtering in quantum-coherent transport through tunnel junctions
based on non-magnetic/semimagnetic heterostructures. We find that spin
filtering in conjunction with the suppression/enhancement of the spin-dependent
Fermi seas in semimagnetic contacts gives rise to (i) spin-split kinks in the
MR of single barriers and (ii) a robust beating pattern in the MR of double
barriers with a semimagnetic well. We believe these are unique signatures for
quantum filtering.Comment: Added references + corrected typo
Modelling of Optical Detection of Spin-Polarized Carrier Injection into Light-Emitting Devices
We investigate the emission of multimodal polarized light from Light Emitting
Devices due to spin-aligned carriers injection. The results are derived through
operator Langevin equations, which include thermal and carrier-injection
fluctuations, as well as non-radiative recombination and electronic g-factor
temperature dependence. We study the dynamics of the optoelectronic processes
and show how the temperature-dependent g-factor and magnetic field affect the
polarization degree of the emitted light. In addition, at high temperatures,
thermal fluctuation reduces the efficiency of the optoelectronic detection
method for measuring spin-polarization degree of carrier injection into
non-magnetic semicondutors.Comment: 15 pages, 7 figures, replaced by revised version. To appear in Phys.
Rev.
Highly anisotropic g-factor of two-dimensional hole systems
Coupling the spin degree of freedom to the anisotropic orbital motion of
two-dimensional (2D) hole systems gives rise to a highly anisotropic Zeeman
splitting with respect to different orientations of an in-plane magnetic field
B relative to the crystal axes. This mechanism has no analogue in the bulk band
structure. We obtain good, qualitative agreement between theory and
experimental data, taken in GaAs 2D hole systems grown on (113) substrates,
showing the anisotropic depopulation of the upper spin subband as a function of
in-plane B.Comment: 4 pages, 3 figure
Longitudinal spin transport in diluted magnetic semiconductor superlattices: the effect of the giant Zeeman splitting
Longitudinal spin transport in diluted magnetic semiconductor superlattices
is investigated theoretically. The longitudinal magnetoconductivity (MC) in
such systems exhibits an oscillating behavior as function of an external
magnetic field. In the weak magnetic field region the giant Zeeman splitting
plays a dominant role which leads to a large negative magnetoconductivity. In
the strong magnetic field region the MC exhibits deep dips with increasing
magnetic field. The oscillating behavior is attributed to the interplay between
the discrete Landau levels and the Fermi surface. The decrease of the MC at low
magnetic field is caused by the exchange interaction between the electron
in the conduction band and the magnetic ions.Comment: 6 pages, 9 figures, submitted to Phys. Rev.
Electron transport in gated InGaAs and InAsP quantum well wires in selectively-grown InP ridge structures
The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires
embedded in InP ridge structures and investigate their transport properties.
The InP ridge structures that contain the wires are selectively grown by
chemical beam epitaxy (CBE) on pre-patterned InP substrates. To optimize the
growth and micro-fabrication processes for electronic transport, we explore the
Ohmic contact resistance, the electron density, and the mobility as a function
of the wire width using standard transport and Shubnikov-de Haas measurements.
At low temperatures the ridge structures reveal reproducible mesoscopic
conductance fluctuations. We also fabricate ridge structures with submicron
gate electrodes that exhibit non-leaky gating and good pinch-off
characteristics acceptable for device operation. Using such wrap gate
electrodes, we demonstrate that the wires can be split to form quantum dots
evidenced by Coulomb blockade oscillations in transport measurements.Comment: 5 pages, 4 figures, additional references and improved Fig. 4c,
MSS-14 conference, submitted to Physica
Spin-drift transport and its applications
We study the generation of non-equilibrium spin currents in systems with
spatially-inhomogeneous magnetic potentials. For sufficiently high current
densities, the spin polarization can be transported over distances
significantly exceeding the intrinsic spin-diffusion length. This enables
applications that are impossible within the conventional spin-diffusion regime.
Specifically, we propose dc measurement schemes for the carrier spin relaxation
times, and , as well as demonstrate the possibility of spin species
separation by driving current through a region with an inhomogeneous magnetic
potential.Comment: 4 pages, 2 eps figure
Mesoscopic spin confinement during acoustically induced transport
Long coherence lifetimes of electron spins transported using moving potential
dots are shown to result from the mesoscopic confinement of the spin vector.
The confinement dimensions required for spin control are governed by the
characteristic spin-orbit length of the electron spins, which must be larger
than the dimensions of the dot potential. We show that the coherence lifetime
of the electron spins is independent of the local carrier densities within each
potential dot and that the precession frequency, which is determined by the
Dresselhaus contribution to the spin-orbit coupling, can be modified by varying
the sample dimensions resulting in predictable changes in the spin-orbit length
and, consequently, in the spin coherence lifetime.Comment: 10 pages, 2 figure
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